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| MMBT2222A SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Epitaxial planar die construction * Complementary PNP Type available(MMBT2907A) SOT-23 MECHANICAL DATA * * * * * COLLECTOR 3 Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram 1 BASE 0.055(1.40) 2 EMITTER 0.006(0.15) 0.003(0.08) 0.047(1.20) 0.043(1.10) 0.035(0.90) 0.020(0.50) 0.012(0.30) 0.004(0.10) 0.000(0.00) 0.020(0.50) 0.012(0.30) 0.100(2.55) 0.089(2.25) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 0.019(2.00) 0.071(1.80) 1 3 0.110(2.80) 2 0.118(3.00) Dimensions in inches and (millimeters) MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted ) RATINGS o o Max. Steady State Power Dissipation (1) @TA=25 C Derate above 25 C o SYMBOL PD TJ TSTG VALUE 300 150 -55 to +150 UNITS mW o o Max. Operating Temperature Range Storage Temperature Range C C ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Thermal Resistance Junction to Ambient Notes: 1. Alumina=0.4*0.3*0.024in. 99.5% alumina. 2. " Fully ROHS Compliant ", "100% Sn plating (Pb-free)". SYMBOL R qJA MIN. TYP. MAX. 417 UNITS o C/W 2007-5 ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I C = 10mAdc, I B = 0) Collector-Base Breakdown Voltage (I C = 10mAdc, I E = 0) Emitter-Base Breakdown Voltage (I E = 10mAdc, I C = 0) Collector Cutoff Current (V CE = 60Vdc,V EB(off) = 3.0Vdc Collector Cutoff Current (V CB = 60Vdc, I E = 0) (V CB = 60Vdc, I E = 0, TA= 125 C) Emitter Cutoff Current (V EB = 3.0Vdc, I C = 0) Base Cutoff Current (V CE = 60Vdc, V EB(off) = 3.0Vdc O Symbol Min Max Unit V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO IEBO IBL 40 75 6.0 - 0.1 0.01 10 0.1 20 Vdc Vdc Vdc uAdc uAdc uAdc nAdc ON CHARACTERISTICS DC Current Gain (I C = 10mAdc, V CE = 10Vdc, TA= -55 C) (I C = 500mAdc, V CE = 10Vdc) (1) Collector-Emitter Saturation Voltage (1) (I C = 150mAdc, I B = 15mAdc) (I C = 500mAdc, I B = 50mAdc) Base-Emitter Saturation Voltage (1) (I C = 150mAdc, I B = 15mAdc) (I C = 500mAdc, I B = 50mAdc) O hFE 35 40 0.6 - 0.3 1.0 1.2 2.0 - VCE(sat) Vdc VBE(sat) Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (2) (I C = 20mAdc, V CE = 20Vdc, f= 100MHz) Input Capacitance (V EB =0.5Vdc, I C = 0, f= 1.0MHz) Input Impedance (I C = 1.0mAdc, V CE =10Vdc, f=1.0kHz) (I C = 10mAdc, V CE =10Vdc, f=1.0kHz) Voltage Feedback Ratio (I C = 1.0mAdc, V CE = 10Vdc, f= 1.0kHz) (I C = 10mAdc, V CE =10Vdc, f= 1.0kHz) Small-Signal Current Gain (I C = 1.0mAdc, V CE = 10Vdc, f= 1.0kHz) (I C = 10mAdc, V CE = 10Vdc, f= 1.0kHz) Output Admittance (I C = 1.0mAdc, V CE = 10Vdc, f= 1.0kHz) (I C = 10mAdc, V CE = 10Vdc, f= 1.0kHz) Collector Base Time Constant (I E = 20mAdc, V CB = 20Vdc, f= 31.8MHz) Noise Figure (I C = 100mAdc, V CE = 10Vdc, R S = 1.0kW, f= 1.0kHz) fT Cibo hie 300 2.0 0.25 50 75 5.0 25 25 8.0 1.25 8.0 4.0 300 375 35 200 150 4.0 MHz pF kW hre X 10 -4 hfe - hoe rb,Cc NF umhos ps dB SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (V CC = 30Vdc, V BE(off) = -0.5Vdc, I C = 150mAdc, I B1 = 15mAdc) td tr ts tf 10 25 225 60 ns ns (V CC = 30Vdc, I C = 150mAdc, I B1 = I B2 = 15mAdc) < NOTES : 1. Pulse Test: Pulse Width-300ms,Duty Cycle<2.0% 2. fT is defined as the frequency at which |hfe| extrapolates to unity RATING AND CHARACTERISTICS CURVES ( MMBT2222A ) 1000 700 500 300 200 100 70 50 30 20 10 01 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 1.0k hFE, DCCURRENT GAIN Figure 1. DC Current Gain 1.0 VCE, COLLECTOR-EMITTER VOLTAGE (V) 0.8 0.6 0.4 0.2 0 0.005 IC,CCLLECTOR CURRENT (mA) 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 Figure 2. Collector Saturation Region 200 100 70 50 t,TIME (ns) 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 20 30 50 70 100 200 300 500 IC/IB=10 TJ=25OC tr@VCC=30V td@VEB(off)=2.0V td@VEB(off)=0 IB,BASE CURRENT (mA) 500 300 200 t,TIME (ns) 100 70 50 30 20 10 7.0 5.0 5.0 7.0 10 20 30 50 70 100 200 300 500 t's=ts-1/8tf VCC=30V IC/IB=10 IB1=IB2 TJ=25 OC tf Figure 3.Turn-On Time IC,CLLECTOR CURRENT (mA) Figure 4.Turn-Off Time IC,CLLECTOR CURRENT (mA) RATING AND CHARACTERISTICS CURVES ( MMBT2222A ) 10 8.0 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 f, FREQUENCY (KHz) NT, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) IC=1.0mA,RS=150W 500uA,RS=200W 100uA,RS=2.0KW 50uA,RS=4.0KW RS=OPTIMUM SOURCE RESISTANCE 10 f=1.0KHz 8.0 6.0 4.0 2.0 0 IC=50uA 100uA 500uA 1.0mA 50 100 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k T, CURRENT-GAINBANDWIDTHPRODUCT (MHz) Figure 5.Frequency Effects 30 20 CAPACITANCE (PF) Ceb Figure 6.Source Resistance Effects 500 VCE=20V O TJ=25 C RS,SOURCE RESISTANCE (OHMS) 300 200 10 7.0 5.0 CCb 100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 3.0 2.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 REVERSE VOLTAGE (VOLTS) Figure 7.Capacitances 1.0 TJ=25 C VBE(sat)@IC/IB=10 1.0V O Figure 8.Currunt-Gain Bandwidth Product +0.5 0 COEFFICIENT (mV/OC) -0.5 -1.0 -1.5 -2.0 RqVB for VBE IC, COLLECTOR CURRENT (mA) 0.8 V, VOLTAGE (V) 0.6 0.4 0.2 0 RqVC for VCE(sat) VBE(on)@VCE=10V VCE(sat)@IC/IB=10 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k IC, COLLECTOR CURRENT (mA) -2.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 IC, COLLECTOR CURRENT (mA) Figure 9."On" Voltages Figure 10.Temperature Coefficients DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rectron Inc and its subsidiaries harmless against all claims, damages and expenditures. |
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